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| BAT 240A Silicon Schottky Diode Preliminary data * Rectifier Schottky diode for modem applications * High reverse voltage * For power supply * For clamping and protection in all high voltage applications 3 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAT 240A Marking Ordering Code 4Ms Q62702-A1234 Pin Configuration 1=C1/A2 2 = C2 3 = A1 Package SOT-23 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Surge forward current (t 10ms) Total power dissipation, T S = 28 C Junction temperature Storage temperature Maximum Ratings Junction - ambient 1) Symbol Value 240 250 400 1 400 80 - 55 ...+150 Unit V V mA A mW C VR VRM IF IFSM Ptot Tj Tstg RthJA RthJS 465 305 K/W Junction - soldering point 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group Semiconductor Group 11 Sep-09-1998 1998-11-01 BAT 240A Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter DC characteristics Breakdown voltage Symbol min. Values typ. max. V A 5 0.325 0.37 0.47 50 V Unit V(BR) IR 240 I (BR) = 500 A Reverse current VR = 200 V VR = 240 Forward voltage VF I F = 10 mA I F = 20 mA I F = 50 mA AC characteristics Diode capacitance CT - 11.5 - pF VR = 10 V, f = 1 MHz Semiconductor Group Semiconductor Group 22 Sep-09-1998 1998-11-01 BAT 240A Forward current IF = f (TA*;TS) * Package mounted on epoxy 500 mA 400 350 TS IF 300 250 200 150 100 50 0 0 TA 20 40 60 80 100 120 C 150 TA,TS Permissible Pulse Load R thJS = f(t p) Permissible Pulse Load IFmax / IFDC = f(tp) 10 3 K/W - 10 3 10 2 IFmax / IFDC RthJS 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 -5 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 -1 -6 10 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Semiconductor Group Semiconductor Group 33 Sep-09-1998 1998-11-01 |
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